May 10, 2022
Efficient Power Conversion Corp. (EPC) which develops enhancement-mode gallium nitride (eGan) power FETs and ICs, has announced expanding its selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET.
EPC said the new model is ideal for applications with demanding requirements for high power density performance, including 48V-54V input DC-DC for new servers and artificial intelligence. Lower gate charges, QGD, and zero reverse recovery losses enable high-frequency operations of 1MHz and beyond, and high efficiency in a 10.2-square-mm footprint. The company said the EPC2071 is ideal for brushless DC (BLDC) motor drives for e-bikes, e-scooter, robots, drones, and power tools. The new model is one-third the size of a silicon MOSFET with the same RDS(on), QG is one-fourth that of the MOSFET, and the dead time can be reduced from 500 ns to 20 ns to optimize motor plus inverter efficiency and reduce acoustic noise, EPC added.
“The EPC2071 makes the ideal switch for the primary side of the LLC DC-DC converter from 40V-60V to 12V-5V,” said Alex Lidow, co-founder and CEO of EPC. “This 100-volt device offers improved performance and cost compared with previous-generation 100V GaN FETs, allowing designers to economically improve efficiency and power density. These parts are also suitable for telecom and server power supplies, and solar applications. Additionally, EPC2071 is less expensive than comparable silicon devices and in stock.”
EPC said the 2071 eGAN FET is priced at 1K u/reel at $3.81 each, and the EPC9174 development board is priced at $498 each. The company said designers looking to replace their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions.